SICC.SICC was established in November 2010 as a technology-driven enterprise specializing in the R&D, production, and sales of silicon carbide single crystal substrate materials. Guided by the business philosophy of “Advanced · Quality · Sustainability,” the company prioritizes meeting customer needs and solving their challenges. It emphasizes product and service quality, independently masters core process technologies, actively expands its market presence, and pursues sustainable business development. Silicon carbide single-crystal substrate materials are wide-bandgap semiconductor materials. Compared to traditional materials, they exhibit superior physical properties, effectively enhancing the power density and overall performance of downstream devices. They hold broad application prospects in power electronics and microwave electronics. However, these superior properties require intricate and complex fabrication processes. Growing silicon carbide single crystals demands high-temperature, low-pressure, sealed environments, where even minor environmental fluctuations can cause lattice disordering and compromise substrate quality. Leveraging an exceptional R&D team and years of industrialization experience, the company prioritizes technological leadership and quality enhancement. Committed to long-term innovation, it focuses on developing integrated solutions while refining services and products, striving to become an internationally renowned semiconductor company. Key products include: Conductive Silicon Carbide Substrates and Semi-Insulating Silicon Carbide Substrates.
